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| MR750 SERIES High Current Lead Mounted Rectifiers * Current Capacity Comparable to Chassis Mounted Rectifiers * Very High Surge Capacity * Insulated Case Mechanical Characteristics: http://onsemi.com MR754 and MR760 are Preferred Devices * Case: Epoxy, Molded * Weight: 2.5 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Lead * Lead Temperature for Soldering Purposes: 260C Max. for 10 * * * Seconds Polarity: Cathode Polarity Band Shipped 1000 units per plastic bag. Available Tape and Reeled, 800 units per reel by adding a "RL'' suffix to the part number Marking: MR750 -- R750 Marking: MR751 -- R751 Marking: MR752 -- R752 Marking: MR754 -- R754 Marking: MR756 -- R756 Marking: MR758 -- R758 Marking: MR760 -- R760 is Readily Solderable HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50 - 1000 VOLTS DIFFUSED JUNCTION AXIAL LEAD CASE 194 STYLE 1 ORDERING INFORMATION Device MR750RL MR751RL MR752RL MR754RL MR756RL MR758RL MR760RL Package Axial Lead Axial Lead Axial Lead Axial Lead Axial Lead Axial Lead Axial Lead Shipping 800/Tape & Reel 800/Tape & Reel 800/Tape & Reel 800/Tape & Reel 800/Tape & Reel 800/Tape & Reel 800/Tape & Reel Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2000 1 February, 2000 - Rev. 3 Publication Order Number: MR750/D MR750 SERIES MAXIMUM RATINGS Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Non-Repetitive Peak Reverse Voltage (Halfwave, single phase, 60 Hz peak) RMS Reverse Voltage Average Rectified Forward Current (Single phase, resistive load, 60 Hz) See Figures 5 and 6 Non-Repetitive Peak Surge Current (Surge applied at rated load conditions) Operating and Storage Junction Temperature Range Symbol VRRM VRWM VR VRSM VR(RMS) IO MR750 50 MR751 100 MR752 200 MR754 400 MR756 600 MR758 800 MR760 1000 Unit Volts 60 35 120 70 240 140 480 280 720 420 960 560 1200 700 Volts Volts Amps 22 (TL = 60C, 1/8 Lead Lengths) 6.0 (TA = 60C, P.C. Board mounting) IFSM TJ, Tstg 400 (for 1 cycle) Amps C *65 to +175 Symbol vF VF IR Max 1.25 0.90 25 1.0 ELECTRICAL CHARACTERISTICS Characteristic and Conditions Maximum Instantaneous Forward Voltage Drop (iF = 100 Amps, TJ = 25C) Maximum Forward Voltage Drop (IF = 6.0 Amps, TA = 25C, 3/8 leads) Maximum Reverse Current (Rated dc Voltage) TJ = 25C TJ = 100C Unit Volts Volts A mA http://onsemi.com 2 MR750 SERIES IFSM , PEAK HALF WAVE CURRENT (AMP) 700 500 300 200 TYPICAL 100 iF, INSTANTANEOUS FORWARD CURRENT (AMP) 70 50 30 20 TJ = 25C 600 400 300 25C 200 25C TJ = 175C 100 80 60 1.0 2.0 5.0 10 20 50 100 NUMBER OF CYCLES AT 60 Hz 175C VRRM MAY BE APPLIED BETWEEN EACH CYCLE OF SURGE. THE TJ NOTED IS TJ PRIOR TO SURGE MAXIMUM 10 7.0 5.0 3.0 2.0 COEFFICIENT (mV/ C) +0.5 Figure 2. Maximum Surge Capability 0 TYPICAL RANGE -0.5 1.0 0.7 0.5 0.3 0.2 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) -1.0 -1.5 -2.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 iF, INSTANTANEOUS FORWARD CURRENT (AMP) Figure 1. Forward Voltage 20 10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 HEAT SINK L L Figure 3. Forward Voltage Temperature Coefficient R JL(t) , JUNCTION-TO-LEAD TRANSIENT THERMAL RESISTANCE ( C/W) 1/2" 3/8" 1/4" 1/8" Both leads to heat sink, with lengths as shown. Variations in RqJL(t) below 2.0 seconds are independent of lead connections of 1/8 inch or greater, and vary only about 20% from the values shown. Values for times greater than 2.0 seconds may be obtained by drawing a curve, with the end point (at 70 seconds) taken from Figure 8, or calculated from the notes, using the given curves as a guide. Either typical or maximum values may be used. For RqJL(t) values at pulse widths less than 0.1 second, the above curve can be extrapolated down to 10 s at a continuing slope. 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 t, TIME (SECONDS) Figure 4. Typical Transient Thermal Resistance http://onsemi.com 3 MR750 SERIES IF(AV) , AVERAGE FORWARD CURRENT (AMPS) 28 L = 1/8" 24 20 16 12 8.0 4.0 0 0 20 40 60 80 100 120 140 160 180 200 1/4" 3/8" RESISTIVE INDUCTIVE LOADS BOTH LEADS TO HEAT SINK WITH LENGTHS AS SHOWN 5/8" IF(AV) , AVERAGE FORWARD CURRENT (AMPS) 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 20 40 RJA = 40C/W SEE NOTE 6F (IPK/IAVE = 6.28) 60 80 100 120 140 160 180 200 RJA = 25C/W SEE NOTE RESISTIVE INDUCTIVE LOADS CAPACITANCE LOADS - 1F & 3F I(pk) = 5 Iavg I(pk) = 10 Iavg I(pk) = 20 Iavg f = 60 Hz TL, LEAD TEMPERATURE (C) TA, AMBIENT TEMPERATURE (C) Figure 5. Maximum Current Ratings Figure 6. Maximum Current Ratings NOTES 32 PF(AV) , POWER DISSIPATION (WATTS) 28 24 20 16 12 8.0 4.0 0 0 4.0 8.0 12 16 20 24 28 32 RESISTIVE - INDUCTIVE LOADS Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. Lowest values occur when one side of the rectifier is brought as close as possible to the heat sink as shown below. Terms in the model signify: TC = Case Temperature TA = Ambient Temperature TJ = Junction Temperature TL = Lead Temperature RqS = Thermal Resistance, Heat Sink to Ambient RqL = Thermal Resistance, Lead to Heat Sink RqJ = Thermal Resistance, Junction to Case PF = Power Dissipation (Subscripts A and K refer to anode and cathode sides, respectively.) Values for thermal resistance components are: RqL = 40C/W/in. Typically and 44C/W/in Maximum. RqJ = 2C/W typically and 4C/W Maximum. Since RqJ is so low, measurements of the case temperature, TC, will be approximately equal to junction temperature in practical lead mounted applications. When used as a 60 Hz rectifierm the slow thermal response holds TJ(PK) close to TJ(AVG). Therefore maximum lead temperature may be found from: TL = 175-RJL PF. PF may be found from Figure 7. The recommended method of mounting to a P.C. board is shown on the sketch, where RJA is approximately 25C/W for a 1-1/2" x 1-1/2" copper surface area. Values of 40C/W are typical for mounting to terminal strips or P.C. boards where available surface area is small. CAPACITANCE LOADS I(pk) = 5 Iavg 10 Iavg 20 Iavg 6F 1F & 3F THERMAL CIRCUIT MODEL (For Heat Conduction Through The Leads) RS(A) TA(A) TL(A) TC(A) TJ RL(A) RJ(A) RJ(K) PF TC(K) TL(K) RL(K) RS(K) TA(K) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 7. Power Dissipation 40 R JL , THERMAL RESISTANCE, JUNCTION-TO-LEAD( C/W) 35 30 25 20 15 10 5.0 0 0 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1.0 L, LEAD LENGTH (INCHES) BOTH LEADS TO HEAT SINK, EQUAL LENGTH SINGLE LEAD TO HEAT SINK, INSIGNIFICANT HEAT FLOW THROUGH OTHER LEAD Figure 8. Steady State Thermal Resistance http://onsemi.com 4 EE EE EE EE EE EE EE EE Board Ground Plane Recommended mounting for half wave circuit MR750 SERIES 100 70 TJ = 175C CURRENT INPUT WAVEFORM 30 TJ = 25C t rr , REVERSE RECOVERY TIME ( m s) RELATIVE EFFICIENCY (%) 30 20 TJ = 25C 10 7.0 5.0 3.0 2.0 1.0 0.1 0 IR trr 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IF = 5 A 3A 1A IF 50 20 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 REPETITION FREQUENCY (kHz) IR/IF, RATIO OF REVERSE TO FORWARD CURRENT Figure 9. Rectification Efficiency 1000 700 500 C, CAPACITANCE (pF) 300 200 100 70 50 30 20 10 1.0 1.0 t fr , FORWARD RECOVERY TIME ( m s) 0.7 Figure 10. Reverse Recovery Time uf tfr TJ = 25C TJ = 25C ufr 0.5 ufr = 1.0 V 0.3 0.2 ufr = 2.0 V 0.1 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 VR, REVERSE VOLTAGE (VOLTS) IF, FORWARD PULSE CURRENT (AMP) Figure 11. Junction Capacitance Figure 12. Forward Recovery Time RS RL VO For a square wave input of amplitude Vm, the efficiency factor becomes: (square) Figure 13. Single-Phase Half-Wave Rectifier Circuit + V 2m 2R L . V 2m 100% RL + 50% (3) The rectification efficiency factor shown in Figure 9 was calculated using the formula: + P(rms) + P (dc) V 2o (dc) . . V2o(rms) 100%+ V 2o (ac) V 2o (dc) 100% RL V2o(dc) RL (1) ) For a sine wave input Vm sin (wt) to the diode, assumed lossless, the maximum theoretical efficiency factor becomes: V2m p 2R L . V2m 100% 4R L (sine) + + 42 .100% + 40.6% (2) (A full wave circuit has twice these efficiencies) As the frequency of the input signal is increased, the reverse recovery time of the diode (Figure 10) becomes significant, resulting in an increasing ac voltage component across RL which is opposite in polarity to the forward current, thereby reducing the value of the efficiency factor , as shown on Figure 9. It should be emphasized that Figure 9 shows waveform efficiency only; it does not provide a measure of diode losses. Data was obtained by measuring the ac component of Vo with a true rms ac voltmeter and the dc component with a dc voltmeter. The data was used in Equation 1 to obtain points for Figure 9. http://onsemi.com 5 MR750 SERIES PACKAGE DIMENSIONS AXIAL LEAD CASE 194-04 ISSUE F A D 1 NOTES: 1. CATHODE SYMBOL ON PACKAGE. K DIM A B D K MILLIMETERS MIN MAX 8.43 8.69 5.94 6.25 1.27 1.35 25.15 25.65 INCHES MIN MAX 0.332 0.342 0.234 0.246 0.050 0.053 0.990 1.010 B K 2 STYLE 1: PIN 1. CATHODE 2. ANODE http://onsemi.com 6 MR750 SERIES Notes http://onsemi.com 7 MR750 SERIES ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION North America Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (M-F 2:30pm to 5:00pm Munich Time) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (M-F 2:30pm to 5:00pm Toulouse Time) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (M-F 1:30pm to 5:00pm UK Time) Email: ONlit@hibbertco.com ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong 800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-8549 Phone: 81-3-5487-8345 Email: r14153@onsemi.com Fax Response Line: 303-675-2167 800-344-3810 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 MR750/D |
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